Speaker: Evgeny Gusev, Associate Professor, Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University

Date: November 15, 2023

Time: 10:00

Location: Room 1, Semiconductor R&D Building, Central Campus, Shandong University

Sponsor: Institute of Novel Semiconductors, Shandong University

Abstract:

The report is focused on surface preparation of silicon carbide substrates using electron beam processing (EBP). Wafer output characteristics are discussed in term of roughness and subsurface damage layer. Describing this approach, mechanism of electron beam processing for polishing wafers is explained. Some experience data on electron beam processing of {0001} 6H-SiC and its polishing effect are shown. Based on the obtained results, it is assumed that it is possible to replace several stages of chemical-mechanical polishing with only one EBP stage. Experimental data on synthesis of graphene-like layers on silicon carbide by EBP are presented as addition.

For more information, please visit:

https://www.view.sdu.edu.cn/info/1020/185322.htm